国家/地区 美国（7） 中国（6） 韩国（3） 台湾（3） 世界知识产权组织（3） 日本（2）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15） H01L（9） C01B（5）
H01J（3） H01M（3） C01G（2）
C30B（2）
IPC C23C016/455（15）
发明人 MALLICK A B（2）
公开年 2021（8） 2022（6）
申请年 2021（15）
专利权人 APPLIED MATE.（3）

Depositing gate dielectric on two-dimensional material involves depositing seed layer over atomically smooth surface of two dimensional material, evaporating predefined thickness of seed layer from atomically smooth surface, and performing atomic layer deposition.

SHRIVASTAVA M, KHANEJA M, MEERSHA A

-Product comprises solid state electrolyte particle coated with a coating consisting essentially of metal oxide, and prepared by depositing a coating on a solid state electrolyte particle by atomic layer deposition.

WOOD M, MILLER J, ESPITIA J A, YE J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Apparatus for depositing two-dimensional material, comprises planar high-frequency antenna formed on second surface of dielectric window, and first gas nozzle configured to provide source gas into chamber.

SHIN H, SHIN K, LEE C, LEE C S, SHIN K W, SHIN H J

Preparing copper-based graphene useful for preparing copper-based graphene conductor of electric wire cable, comprises performing surface cleaning and drying on copper material, stacking with high temperature resistant substrate, annealing, and growing graphene layer on copper material surface.

FU J, YANG J, SHEN H, ZHANG W, MA Y

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Spin polarization current generator for spintronics device, has anti-ferromagnetic material placed on non-magnetic insulating substrate, and voltage generating mechanism for generating voltage at two sides of substrate.

LI P, WANG L, OUYANG X

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Porous silicon-carbon composite material for lithium ion battery, comprises core-shell structure, where inner core is composite of porous carbon, cerium dioxide and graphene component, and shell is doped with oxide compound selected from phosphorus oxide, arsenic oxide and selenium oxide.

CAO J

Vapor deposition process for selectively depositing material on a first surface of substrate relative to a second organic surface for semiconductor device, comprises contacting the substrate cyclically with a vapor phase hydrophobic first reactant and a vapor phase second reactant.

TOIS E, HAUKKA S P, NISKANEN A, MATERO R H, SUEMORI H, FAERM E