国家/地区 美国（26） 中国（23） 韩国（10） 世界知识产权组织（9） 日本（7） 欧洲专利局（EPO）（5） 台湾（4）
IPC部 C（42）
IPC大类 C23（42）
IPC小类 C23C（42） C01B（23） B82Y（14）
H01L（8） B01J（5） C25D（3）
B32B（2） C01G（2） C08K（2）
C30B（2） H01B（2） H05H（2）
H05K（2）
IPC C23C016/48（42）
发明人 NAGEL C J（6） BRODEUR C L（5） NAM W（5）
WON D（5） CHIU P（2） FENG Y（2）
HUANG Y（2） LIN K（2） QIU B（2）
YE X（2） ZHANG C（2） ZHANG J（2）
ZHANG L（2）
公开年 2021（6） 2022（6） 2017（5） 2013（4） 2019（4） 2012（3） 2016（3） 2014（2） 2015（2） 2018（2） 2020（2） 2023（2）
申请年 2022（7）  2019（5）  2020（5）  2016（4）  2011（3）  2014（3）  2017（3）  2021（3）  2010（2）  2012（2）  2013（2）  2018（2） 
专利权人 QUANTUM ELEM.（6） NPS CORP（5） HANWHA AEROS.（3） HANWHA TECHW.（2）
UNIV SHAANXI.（2） UNIV SINGAPO.（2） UNIV XIAMEN（2）

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Technology for preparing carbon-based material film based on common action of bias voltage and laser, comprises plasma chemical vapor deposition device based on adding bias and laser control.

ZHU J, WANG S, YANG D, DI M, WANG B

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Formation of patterned layer of material involves selectively irradiating selected portion of support layer during deposition process to form layer of deposited material in pattern defined by selected portion.

PARAYIL VENUGOPALAN S, KURGANOVA E, FARAMARZI V

Plasma enhanced chemical vapor deposition method used in semiconductor structure, comprises turning on radio frequency source of radio frequency system to decompose aromatic hydrocarbon precursor into multiple active radicals at specific frequency to form graphene layer on magnetic layer.

WU Z, NI I, XU Y, HUANG J, WU C, HSU Y, HUANG J Z, HSU Y H

Method for in-situ growth of graphene film on nickel-plated surface of copper metal substrate by laser useful in production, transportation involves pre-coating different solid carbon source on copper-nickel alloy coating, and realizing in-situ growth of graphene film by different types of laser.

CHEN M, QI M, QIANG H, ZHENG X, YE X

Reactor assembly comprises gas inlet, gas outlets, reactor chamber, porous frits having porosity and comprising nanoporous carbon material, reactor head space, reactor assembly lamps, and computer processing unit.

NAGEL C J, BRODEUR C L

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C