国家/地区 中国（14） 世界知识产权组织（4） 美国（3） 日本（2）
IPC部 C（19） H（8）
IPC大类 C23（19）
IPC小类 C23C（19） C01B（5） H01L（5）
IPC C23C016/50（19）
发明人 CHENG S（2） CHENG Y（2） LIU Z（2）
MATSUMOTO T（2） QI Y（2） WANG K（2）
ZHANG X（2） ZHANG Y（2）
公开年 2022（19）
申请年 2022（9）  2021（8）  2020（2） 
专利权人 TOKYO ELECTR.（3） BEIJING GRAP.（2） UNIV PEKING（2）

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Preparing diamond/graphene/carbon nano-tube full-carbon base composite material, comprises e.g. plating diamond surface with catalytic layer, and using direct current injection plasma arc furnace to quickly heat diamond plated with layer.

CHEN L, LIU J, WEI J, YANG Z, LIU Y, YUAN X, ZHENG Y, REN F, LI C

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Preparing friction nano-generator based on vertical graphene array, comprises growing vertical graphene array on metal electrode by plasma enhanced chemical vapor deposition method, spin coating layer of polymer film, drying and curing.

ZOU J, ZHONG G, LIU G, LUO J, JIN H, XUAN W, ZHANG L, DONG S, LIU S

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N

Enhanced graphene film coating device based on plasma chemical vapor deposition (PECVD), has concave lantern ring supporting rod whose upper portion is provided with pushing plate, and bidirectional transmission screw rod whose end is provided.

DENG Z, TANG W, HUANG X, BAI J, SHI Y, LI B

Device for preparing high-conductivity graphene metal composite material, has gas circuit mechanism for introducing gaseous carbon source and auxiliary gas into sample chamber, plasma auxiliary decomposition chamber and hot-pressure chamber.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, SHI H, HUANG D

Preparing defect type graphene field emission cold cathode useful for various vacuum electronic device, comprises growing graphene on copper foil substrate surface by radio-frequency-plasma-enhanced chemical vapor deposition by changing temperature, radio frequency power and gas flow rate.

ZHANG X, LEI W, ZHAO Z, ZHAO N

Carrier plate structure for preparing single crystal silicon heterojunction solar cell, has graphite frame whose front and back surfaces are provided with coating structure, where coating structure is symmetrically arranged.

YANG M, LIU M

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S