国家/地区 中国（10）
IPC部 C（10）
IPC大类 C23（10） C01（6） H01（4）
C21（2）
IPC小类 C23C（10） C01B（6） H01L（4）
C21D（2） H01J（2）
IPC C23C016/26（10）
发明人
公开年 2021（10）
申请年 2020（5）  2021（4） 
专利权人 NINGBO INST .（2）

Directly growing graphene thin film on surface of non-metallic substrate, involves depositing aluminum oxide film on surface of substrate, evaporating copper film on surface of substrate deposited with aluminum oxide film, annealing and growing graphene by chemical vapor deposition.

LOU G, OUYANG Y, WANG W, LIU Z

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Self-supporting graphene wall electrode has hollow structure of graphene wall micro-tube, whose one end is tightly inserted in graphene wall micro-tube and other end passes through graphene wall micro-tube tantalum wire.

LI M, ZHANG C, LI H, LENG Y, LI C

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L

Preparing giant magneto-impedance effect graphene/nanocrystalline composite material comprises e.g. placing iron-based amorphous strip in tubular furnace, annealing to obtain iron-based nanocrystalline strips, and placing in quartz boat.

SONG Y, ZHAO Z, SUN Z, CHEN Y

Preparing graphene film useful in thin film transistor comprises preparing graded porous silica film filled with metal catalyst, depositing graphene on surface of graded porous silicon dioxide film and removing graded porous silica film.

XIA Y, ZHUO E, YU S

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Regulating number of molybdenum disulfide layers in molybdenum disulfide/graphene heterojunction comprises using methane and hydrogen, placing polished copper foil into quartz tube and graphene-transferred silicon dioxide/ substrate.

XU K, ZHOU Y, LI P

Preparing graphene/metal composite powder involves heating carbon-containing free radicals obtained by hot filament cracking to react with metal powder in a fluidized bed, lowering temperature to grow graphene on the fluidized metal powder.

DAI D, YANG K, LIN Z, JIANG N, MA H

Controllable growing of two-dimensional semiconductor film by dissolving excess metal precursor in supercritical carbon dioxide to reach saturation state, introducing supercritical carbon dioxide into nuclear reaction area, and growing film.

XU Q, WANG Q, YIN J, LIU B, WANG Z