国家/地区 中国（16） 美国（11） 韩国（9） 世界知识产权组织（6） 日本（5） 台湾（5） 欧洲专利局（EPO）（4） 德国（3） 英国（2）
IPC部 C（23）
IPC大类 C23（23）
IPC小类 C23C（23） C01B（10） H01L（10）
B01J（4） H01M（4） B82Y（3）
C01G（2） C23F（2） C25B（2）
C30B（2）
IPC C23C016/56（23）
发明人 BYUN K（2） BYUN K E（2） GLASS H（2）
GUINEY I（2） LI G（2） LIU X（2）
SHIN H（2） SHIN H J（2） THOMAS S（2）
TYLER M（2） WALLIS R（2） XI W（2）
公开年 2021（23）
申请年 2020（11）  2021（10）  2019（2） 
专利权人 UNIV SUNGKYU.（3） PARAGRAF LTD（2） SAMSUNG ELEC.（2） UNIV TIANJIN.（2）

Preparation method of nitrogen-doped graphene metal material used in metal corrosion protection involves placing raw materials, providing containing cavity and growth cavity, and placing metal growth substrate in growth cavity.

WU Q, MA Y

Conductive self-lubricating composite coating comprises substrate, the surface of the substrate is sequentially composed of diamond-type layer, diamond-type carbon layer and graphene layer from inside to outside.

WANG B, LI H, YI J, YANG G, CHU W, JIANG N, SONG H

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene to electrode, depositing transition metal layer on graphene-transferred electrode and injecting plasma-treated sulfur gas.

KIM T S, SEOK H H, LEE I, WOO K H

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Improving cleanliness of graphene film comprises subjecting graphene film to high-temperature treatment in vacuum environment, and carrying out chemical vapor deposition method.

CHEN H, XUE R, LIU X, ZHANG J, LI G, PENG H, LIU Z

Method for preparing hole transport layer useful in crystal silicon solar cell involves etching Nafion film on surface of graphene mixed film using plasma enhanced chemical vapor deposition and plasma technology, and exposing graphene film.

YU W, LIU L, HUANG Y, JIA L, SHI X, LIU X, LU W, CONG R

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K