国家/地区 美国（8） 中国（5） 韩国（5） 世界知识产权组织（5） 日本（4） 欧洲专利局（EPO）（2）
IPC部 C（15）
IPC大类 C01（15）
IPC小类 C01B（15） C30B（15） B82Y（8）
H01L（4） C23C（2） H01B（2）
IPC C30B029/02（15）
发明人
公开年 2013（15）
申请年 2012（8）  2013（4）  2011（3） 
专利权人

Composition of graphene-based nanomaterials used in e.g. nanostructure and gas sensor, comprises atomic layer of graphene monoxide, where graphene monoxide is crystallographically ordered and configured to form diffraction rings.

CHEN J, GAJDARDZISKAJOSIFOVSKA M, HIRSCHMUGL C, MATTSON E, PU H, WEINERT M

Apparatus used for producing graphene comprises seed crystal fixed to support substrate, feedstock injector, laser to selectively generate laser beam, and beam shaping optics to couple laser beam to a portion of seed crystal and feedstock.

HAUCK J P

Doped high electronic grade graphene thin film for solid-state solar cells, has n-type/p-type dopants made of nitrogen, boron and phosphorus, where film is grown directly or indirectly on metal catalyst thin film with crystal structure.

VEERASAMY V S

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D