国家/地区 世界知识产权组织（54）
IPC部 C（54）
IPC大类 C01（54）
IPC小类 C01B（54）
IPC C30B029/02（54）
发明人 MANCEVSKI V（3） VEERASAMY V（3） VEERASAMY V S（3）
BERRY V（2） CHIBA Y（2） CHIBA YOSHIHIRO（2）
DING G（2） DIXON S（2） GUINEY I（2）
JANG B Z（2） KIM J（2） LIU X（2）
SEACRIST M R（2） TOH C T（2） VLADIMIR M（2）
公开年 2014（8） 2011（6） 2015（6） 2021（6） 2013（5） 2016（5） 2012（3） 2017（3） 2023（3） 2009（2） 2010（2） 2022（2）
申请年 2012（8）  2014（7）  2009（6）  2013（6）  2020（6）  2015（5）  2022（4）  2011（3）  2016（3） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） UNIVERSAL MA.（3）
JX NIPPON MI.（2） MAX PLANCK G.（2） NANOTEK INST.（2） NIPPON MININ.（2）
PARAGRAF LTD（2） SHANGHAI INS.（2） SUNEDISON SE.（2） UNIV SINGAPO.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M