国家/地区 中国（14） 美国（9） 世界知识产权组织（6） 韩国（5） 日本（4） 欧洲专利局（EPO）（3）
IPC部 C（25）
IPC大类 C30（25）
IPC小类 C30B（25）
IPC C30B029/02（25）
发明人 CHAI Z（2） CHEN J（2） HAN D（2）
HAO Y（2） LI X（2） LIN S（2）
NING J（2） WANG C（2） WANG D（2）
WANG L（2） YAN Y（2） YU G（2）
ZHANG J（2）
公开年 2013（25）
申请年 2013（12）  2012（10）  2011（3） 
专利权人 HANGZHOU GEL.（2） UNIV NANCHAN.（2） UNIV XIDIAN（2）

Composition of graphene-based nanomaterials used in e.g. nanostructure and gas sensor, comprises atomic layer of graphene monoxide, where graphene monoxide is crystallographically ordered and configured to form diffraction rings.

CHEN J, GAJDARDZISKAJOSIFOVSKA M, HIRSCHMUGL C, MATTSON E, PU H, WEINERT M

Apparatus used for producing graphene comprises seed crystal fixed to support substrate, feedstock injector, laser to selectively generate laser beam, and beam shaping optics to couple laser beam to a portion of seed crystal and feedstock.

HAUCK J P

Doped high electronic grade graphene thin film for solid-state solar cells, has n-type/p-type dopants made of nitrogen, boron and phosphorus, where film is grown directly or indirectly on metal catalyst thin film with crystal structure.

VEERASAMY V S

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Low-temperature formation of graphene on surface of silica carbide e.g. used in medical field, involves forming silicon dioxide film on surface of silicon carbide, segregating carbon atom, removing oxidized film and heat treating.

ARIMA K, SANO Y

Single-crystal graphene preparation device has heating device that is located in cavity whose two sides are provided with air inlet and air outlet connected with one end of exhaust pipe whose other end is connected with vacuum pump.

WANG C, WANG L

Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene under a specific pressure in a flow field.

WANG C, WANG L

Formation of graphene film on surface of substrate for, e.g. lasers, involves locating carbon source at substrate surface, controlling ambient conditions to inhibit nucleation, and then initiating graphene nucleation at localized site.

DONG G

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L