国家/地区 美国（10）
IPC部 C（10）
IPC大类 C30（10） C01（9） C23（5）
H01（5） B82（3） B01（2）
IPC小类 C30B（10）
IPC C30B029/02（10）
发明人 TOH C T（2）
公开年 2015（10）
申请年 2014（6）  2013（3） 
专利权人 UNIV SINGAPO.（2）

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Manufacture of ordered graphene structure used for multitouch capacitive panel, involves exposing substrate to laser beam in presence of carbon source and moving substrate or laser beam relative to other, or decreasing laser beam power.

OEZYILMAZ B, TOH C T

Nanocomposite used for reverse storage of hydrogen, comprises monocrystalline or polycrystalline graphene in form of cylindrical spiral roll containing grains having preset minimum diameter and constant spacing.

KULA P, RZEPKOWSKI A, PIETRASIK R, ATRASZKIEWICZ R, DYBOWSKI K, KACZMAREK L, MODRZYK W

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A