国家/地区 世界知识产权组织（61）
IPC部 C（61）
IPC大类 C30（61）
IPC小类 C30B（61）
IPC C30B029/02（61）
发明人 MANCEVSKI V（3） VEERASAMY V（3） VEERASAMY V S（3）
BERRY V（2） CHIBA Y（2） CHIBA YOSHIHIRO（2）
DING G（2） DIXON S（2） DONG G（2）
GUINEY I（2） JANG B Z（2） KIM J（2）
LIU K（2） LIU X（2） PARK H（2）
公开年 2014（9） 2015（7） 2021（7） 2011（6） 2013（6） 2016（5） 2017（4） 2012（3） 2022（3） 2023（3） 2009（2） 2010（2） 2018（2）
申请年 2012（8）  2014（8）  2013（7）  2015（7）  2009（6）  2020（6）  2016（4）  2022（4）  2011（3）  2021（3） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） UNIVERSAL MA.（3）
JX NIPPON MI.（2） MATERIALOW E.（2） MAX PLANCK G.（2） NANOTEK INST.（2）
NIPPON MININ.（2） PARAGRAF LTD（2） SHANGHAI INS.（2） SUNEDISON SE.（2）
UNIV HANYANG.（2） UNIV HANYANG.（2） UNIV PEKING（2） UNIV SINGAPO.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Device used to conversion of feedstock to resultant material having higher degree of crystallinity than feedstock comprises constraining reservoir, electrodes, compression system, alternating current power source and electrical controller.

MANCEVSKI V, LUONG D X, COOKSEY T, WILLIAMS J, MAZOR E, ZHANG Z, JAY B

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Producing single crystal metal layer used as a catalyst layer in a process of two-dimensional (2D) material growth by arranging metal source material and deposition substrate in a closely-spaced relationship, and heating under vacuum.

BURTON O J, HOFMANN S

Preparing two-dimensional single crystal material lamination with large size and interlayer corner comprises growing first and second two-dimensional single crystal material and introducing inert gas and reducing gas, heating and bonding.

LIU K, LIU C, WANG Q, GONG D, WANG E, YU D

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M