国家/地区 美国（13） 中国（11） 世界知识产权组织（9） 韩国（6） 日本（5） 台湾（4） 欧洲专利局（EPO）（3） 加拿大（2）
IPC部 C（25）
IPC大类 C30（25） C01（16） H01（10）
C23（8） B82（6） B32（4）
B01（3） C25（3）
IPC小类 C30B（25） C01B（16） C23C（7）
B82Y（5） H01L（5） B32B（4）
H01B（4） H01M（3） B01J（2）
C25D（2）
IPC C30B029/02（25）
发明人 CHAI Z（3） HAN D（3） HAO Y（3）
WANG D（3） YAN Y（3） ZHANG J（3）
NING J（2） WANG Z（2） ZHANG Y（2）
公开年 2014（25）
申请年 2013（15）  2014（6）  2012（4） 
专利权人 UNIV XIDIAN（3） NIPPON MININ.（2）

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Extraction of carbon used in formation of graphene film used for electronic device e.g. super capacitor, involves depositing portion of graphite on substrate, oxidizing graphite and obtaining graphite oxide, and forming graphene.

NUNNERLEY M J

Copper foil for graphene production and graphene production method used for producing high-quality large-area graphene at low cost.

KOHIKI M, SAKAGUCHI K

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Manufacture of single crystal graphene involves thermal decomposition of carbon source by guiding vaporized carbon source vapor with camphor to a heated substrate, and thermally decomposing the compound on the substrate surface.

SHARMA S, TANEMURA M, UMENO M, KALITA G

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H