国家/地区 中国（9） 美国（5）
IPC部 G（14） H（9） C（3）
B（2）
IPC大类 G01（14） H01（9）
IPC小类 G01J（14）
IPC G01J005/20（14）
发明人 CAI G（2） DI G（2） FANG M（2）
GAO J（2） HUANG L（2） HUANG S（2）
LU H（2） MA Z（2） PAN H（2）
SOOD A K（2） WANG C（2） WU P（2）
公开年 2021（9） 2022（3） 2023（2）
申请年 2021（14）
专利权人 BEIJING NORT.（2） MAGNOLIA OPT.（2） WUHAN GAOXIN.（2）

High-performance microbolometer for defense and commercial systems applications, comprises vanadium oxide and carbon nanotubes or graphene.

ZELLER J W, SOOD A K

Nanocomposite detector structure comprises carbon nanotube film disposed atop the layer of vanadium oxide or amorphous silicon, layer of silicon nitride disposed atop carbon nanotube film, and layer of graphene disposed atop layer of silicon nitride.

EGERTON E J, SOOD A K

Phononically-enhanced imager pixel disposed on imaging plane, comprises set of nanowires coupled to micro-platform and surrounding substrate in which photonic sensing structure having semiconductor device is disposed in micro-platform.

CARR W N

System for cooling graphene, has bias circuit that is configured to apply bias voltage across tunneling barrier, where bias voltage is less than gap voltage of superconductor and greater than one-half of gap voltage.

ENGLUND D R, FONG K C

Method for manufacturing micro-bridge structure infrared detector, involves depositing first dielectric layer and second dielectric layer, and etching second dielectric layer to form patterned dielectric layer to form absorbing plate.

PAN H, WU P, DI G

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Temperature measuring device for graphene drilling processing, has angle rotating mechanism that drives thermal radiation receiving instrument to rotate along X, Z axis direction of processing main shaft.

LIU X

Germanium-doped long wave infrared terahertz detector array used in e.g. weather forecast, has absorption region array and common electrode which are located on front surface of wafer, and back electrode passivation layer located on barrier sheet electrode.

DAI N, YIN Z, SHAN Y, DOU W, LIU C, WANG Y, DENG H

Method of preparing multilayer structure infrared micro-bridge detector, involves depositing third metal interconnection layer and second dielectric layer, and etching third metal interconnection layer into second patterned electrode structure to form absorber plate.

PAN H, WU P, DI G

Piezoelectric resonant infrared sensor useful for array, comprises piezoelectric material whose upper surface is formed with quantum dot film which can respond to infrared light irradiation to accelerate temperature rise of piezoelectric material.

LUO J, ZHONG H, FENG L, GU K