国家/地区 美国（22）
IPC部 C（22）
IPC大类 C01（22）
IPC小类 C01B（22）
IPC H01J037/32（22）
发明人 ANZELMO B H（6） STOWELL M W（6） COOK D（5）
TANNER D（3） BALDWIN J（2） GHEZELBASH H（2）
HINES M（2） IFUKU R（2） KC C B（2）
LANNING B（2） MATSUMOTO T（2） ROGOJINA E（2）
SINGH S（2）
公开年 2021（6） 2022（5） 2015（2） 2016（2） 2018（2）
申请年 2020（6）  2021（4）  2013（3）  2015（2）  2018（2）  2022（2） 
专利权人 LYTEN INC（6） APPLIED MATE.（3） TOKYO ELECTR.（3）

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Producing photoluminescence material involves placing plastic piece into working solution which is water, applying micro-plasma onto surface of the working solution, and degrading the plastic piece into multiple smaller molecular and graphene quantum dot.

CHIANG W, WENG R, WENG R J

Composite material used for functionalizing carbon structures within plasma reactor, or liquid collection facility, comprises polymer, and graphene-containing material, where composite material has glass transition temperature that is 10% greater than glass transition temperature of polymer.

KC C B, BALDWIN J, HINES M, VANHEUSDEN K, ROGOJINA E, COOK D, LANNING B, ANZELMO B H, STOWELL M W

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D

Reactor system useful for producing carbon agglomerates, comprises microwave energy source configured to generate microwave energy, field-enhancing waveguide, expansion chamber in fluid communication with constricted region and configured to expand plasma, and outlet.

TANNER D, COOK D, ANZELMO B H, KALLURI R, STOWELL M W