国家/地区 美国（9） 世界知识产权组织（8） 中国（7） 韩国（6） 日本（5） 台湾（5）
IPC部 C（12）
IPC大类 H01（12） C23（8） C01（6）
H05（3） B01（2） C30（2）
IPC小类 H01J（12）
IPC H01J037/32（12）
发明人 IFUKU R（3） MATSUMOTO T（3） ANZELMO B H（2）
NARKEVICIUTE I（2） STOWELL M W（2） SUGIURA M（2）
UEDA H（2） VARADARAJAN B N（2） WADA M（2）
公开年 2021（12）
申请年 2020（8）  2021（4） 
专利权人 TOKYO ELECTR.（3） LAM RES CORP（2） LYTEN INC（2）

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T

Graphene powder surface modified plasma reaction device comprises shell and rotating structure comprising roller and rotating motor, where rotating structure is set in vacuum cavity in shell.

HUANG L, JIAN X

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D

Reactor system useful for producing carbon agglomerates, comprises microwave energy source configured to generate microwave energy, field-enhancing waveguide, expansion chamber in fluid communication with constricted region and configured to expand plasma, and outlet.

TANNER D, COOK D, ANZELMO B H, KALLURI R, STOWELL M W