国家/地区 美国（9） 韩国（4） 中国（2） 欧洲专利局（EPO）（2）
IPC部 C（9）
IPC大类 C23（9）
IPC小类 C23C（9） H01L（9） C01B（5）
B82Y（2）
IPC H01L021/02（9）
发明人 SHIN H（4） BYUN K（3） BYUN K E（3）
SHIN H J（3） SHIN K（3） SHIN K W（3）
CHO Y（2） CHO Y C（2） JUNG A（2）
JUNG A R（2） LIM H（2） LIM H S（2）
NAM S（2） NAM S G（2） NEMANI S D（2）
公开年 2020（9）
申请年 2019（5）  2020（3） 
专利权人 SAMSUNG ELEC.（4） APPLIED MATE.（2）

Growing graphene sheets on silicon substrate, by placing silicon substrate in growth chamber, forming reduced pressure, flowing methane gas and hydrogen gas, applying microwave signal and forming graphene sheets on silicon substrate.

TSENG W, YEH N

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Forming graphene layer for improving graphene deposition, involves exposing a substrate surface comprising a dielectric material to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form graphene layer.

ZHOU J, CHEN E, LIANG Q, YING C C, NEMANI S D, YIEH E Y

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Forming electronic device i.e. 3-dimentional NAND device involves forming graphene barrier layer on substrate surface and depositing fill layer over barrier layer that prevents diffusion of elements between fill layer and substrate surface.

WU Y, GANDIKOTA S, MALLICK A B, NEMANI S D

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C