国家/地区 美国（20） 中国（10） 日本（10） 世界知识产权组织（9） 欧洲专利局（EPO）（6） 韩国（6） 印度（2）
IPC部 C（23）
IPC大类 H01（23） C01（18） B82（9）
B32（6） C23（6） C30（3）
B01（2） B05（2） C04（2）
C08（2） C25（2）
IPC小类 H01L（23） C01B（18） B82Y（9）
B32B（6） C23C（4） H01B（4）
C30B（3） B05D（2） B82B（2）
C04B（2） C08K（2） C23F（2）
C25D（2）
IPC H01L021/02（23）
发明人 AFZALIARDAKANI A（2） JEON I（2） JUNG S（2）
MAAROUF A（2） MARTYNA G J（2） SAENGER K（2）
SATO S（2）
公开年 2015（23）
申请年 2015（12）  2014（7）  2013（4） 
专利权人 FUJITSU LTD（3） INT BUSINESS.（3） EGYPT NANOTE.（2）

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D

Grading gallium nitride nano array used for preparing high efficiency, flexible, high-performance gallium nitride-based device comprises graphene nano sheet substrate and upper substrate without catalyst graphene nano sheet damaged.

LI L, YANG H

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K