国家/地区 中国（18） 美国（16） 台湾（8） 世界知识产权组织（6） 英国（4） 韩国（4） 日本（3） 欧洲专利局（EPO）（2）
IPC部 C（39）
IPC大类 H01（39） C23（20） C01（17）
C30（14） B82（3） H05（3）
C09（2） G03（2） G06（2）
IPC小类 H01L（39） C23C（20） C01B（17）
C30B（14） B82Y（3） C01G（2）
C09D（2） G03F（2） G06F（2）
H01B（2） H01J（2） H05K（2）
IPC H01L021/02（39）
发明人 GUINEY I（4） DIXON S（3） HAO Y（3）
THOMAS S（3） ZHANG J（3） FENG H（2）
MA P（2） NING J（2） PAN Y（2）
SEOL M（2） SHIN H（2） SHIN H J（2）
TANG J（2） WANG D（2） WANG J（2）
公开年 2022（39）
申请年 2021（20）  2022（17）  2020（2） 
专利权人 PARAGRAF LTD（4） SAMSUNG ELEC.（3） APPLIED MATE.（2） CEC COMPOUND.（2）
FUJITSU LTD（2） TAIWAN SEMIC.（2） UNIV XIDIAN（2）

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Preparation method of surface P-type gallium oxide, involves preparing single-layer polar hydrogen fluoride graphene by surface functional growth, constructing heterojunction interface between gallium oxides/polar fluoride graphene, and obtaining surface-P-type gallium oxide without lattice damage.

HAO Y, ZHANG J, GAO X, LIN Z, SU J, YUAN H, CHANG J

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Thin film epidermal electronic device used for healthcare and textile-integrated touch sensing for human-machine interfaces, comprises polymer film having holes, and conductive nanomaterials connected to form network of nanomaterials, for causing portion of polymer film to act as electrode.

YAO S, ZHOU W, ZHU Y

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S