国家/地区 美国（8）
IPC部 B（8）
IPC大类 C23（8）
IPC小类 C23C（8） C01B（6） B82Y（5）
H01L（2）
IPC C23C016/458（8）
发明人 LI X（3） BOL A A（2） JEONG S（2）
公开年 2013（3）
申请年 2012（2） 
专利权人 INT BUSINESS.（2） LI X（2）

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Method for generating graphene film, involves placing substrate for graphene film synthesis inside of quasi-enclosed substrate holder and generating graphene film on substrate through chemical vapor deposition.

BOL A A, LI X

Apparatus used to form graphene layer comprises reaction chamber containing support layer, heating element to heat the support layer, and control device configured to control the formation of graphene layer on surface of support layer.

BOUCHIAT V, CORAUX J, HAN Z

Susceptor has first fluoro polymer layer that is arranged on first surface of susceptor portion, and graphene layer is arranged on first fluoro polymer layer.

VISSER R J, JEONG S, DODABALAPUR A

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Method for synthesizing e.g. graphene film using chemical vapor deposition-type furnace for electronics application, involves positioning two support fixtures in reaction chamber, and unloading substrate from support fixtures.

LI X, LIN Y, SUNG C

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I