国家/地区 美国（36） 世界知识产权组织（20） 韩国（19） 中国（14） 日本（11） 欧洲专利局（EPO）（7） 台湾（4） 英国（2）
IPC部 B（46）
IPC大类 C23（46）
IPC小类 C23C（46） C01B（39） B82Y（34）
B32B（20） H01L（15） B01J（14）
H01B（10） B05D（7） B82B（7）
C30B（5） H05K（4） B44C（3）
H05B（3） B29C（2） C23F（2）
IPC C23C016/26（46）
发明人 CHOI J（5） HONG B H（3） KIM H（3）
CHOI B（2） CHOI B L（2） CHOI J Y（2）
HUNLEY D P（2） KIM K H（2） KIM Y K（2）
LEE E（2） LEE E K（2） LEE J（2）
LIN Y（2） SHIN H（2） SHIN H J（2）
公开年 2013（29） 2012（15） 2014（2）
申请年 2012（46）
专利权人 SAMSUNG ELEC.（5） HANWHA TECHW.（4） SAMSUNG TECH.（4） UNIV SUNGKYU.（4）
HANWHA AEROS.（3） UNIV SUNGKYU.（3） CHOI J（2） HONG B H（2）
LIN Y（2） SRC CORP（2） TOSHIBA KK（2） UNIV KENTUCK.（2）
UNIV SUNGKYU.（2）

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Method for synthesizing e.g. graphene film using chemical vapor deposition-type furnace for electronics application, involves positioning two support fixtures in reaction chamber, and unloading substrate from support fixtures.

LI X, LIN Y, SUNG C

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Preparation of graphene paper involves introducing protective gas into reaction chamber having clean substrate, heating substrate, continuously introducing carbonaceous material and cooling to obtain graphene paper on substrate surface.

WANG Y, YUAN X, ZHOU M

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.

TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Forming graphene film (on surface of substrate) used in e.g. lasers, comprises locating carbon source at or in vicinity of surface, controlling ambient conditions, applying temporary change of condition at localized site and controlling.

DONG G