国家/地区 德国（11）
IPC部 B（11）
IPC大类 H01（7） C01（6） B82（5）
B05（4） B01（2）
IPC小类 C01B（6） B05D（4） H01L（4）
B82B（3） B82Y（3） H01B（3）
B01J（2）
IPC C01B031/04（5） C01B031/02（4） B05D003/02（2）
B05D005/12（2） B82B003/00（2） C01B031/00（2）
H01L021/28（2） H01L029/16（2）
发明人 GILJE（2） GILJE S S（2） JWILYE E S（2）
公开年 2010（11）
申请年 2008（6）  2009（4） 
专利权人 GILJE S S（2） GM GLOBAL TE.（2） GM GLOBAL TE.（2） NORTHROP GRU.（2）

Soldering tip for hard- and soft-soldering, comprises graphene layers in its structure.

DOBRICK C M

Method for providing electrical connection to portion of graphene layer used in e.g. microelectronic device, involves forming recess that create boundary between first portion of recess and second portion of recess.

HAQUE S, LEHTINIEMI R K, KARKKAINEN A M, LECHNER L, HAKONEN P, HAQUE S M, LEHTINIEMI R, KAERKKAEINEN A

Converting a graphene oxide target into graphene, comprises irradiating a graphene oxide target with a light to initiate deoxidation reaction.

GILJE S S, JWILYE E S, GILJE

Method for creating graphene for use in e.g. material science, involves dispersing graphene oxide into water to form dispersion, and adding solvent to dispersion to form solution, where temperature of solution is controlled to form graphene.

GILJE S S, GILJE, JWILYE E S

Unipolar hetero-junction depletion-layer transistor for use in high frequency circuit utilized for e.g. wireless communication, has tunnel diode permitting current of carriers in direction of collector, where base includes graphene layer.

LIPPERT G, MEHR W

Product comprises shape memory polymer material and graphene material incorporated into the shape memory polymer material to form a polymer system.

CHENG Y T, XIAO X, XIE T, SHAW X

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Graphene-coated component for, e.g. electrodes of batteries, has graphene film provided on metallic substrate having carbon formed into solid solution, and consisting of solid-solution carbon precipitated on surface of substrate.

FUJITA DAISUKE, SAGISAKA KEISUKE, ONISHI KEIKO, FUJITA D, SAGISAKA K, ONISHI K

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Flow field plate for fuel cell applications comprises graphene-containing layer having carbon layer surface with small contact angle and disposed over metal plate.

ABD E M H, DADHEECH G V, MIKHAIL Y M, TRABOLD T A, DOSHIRCI G V, FALTA S R, ELHAMID M H A, ABBOUD E M H, TERRABOD T A