国家/地区 中国（24）
IPC部 C（24）
IPC大类 C23（24） C01（7） C25（4）
C22（3） G21（3） B22（2）
C21（2） C30（2） H01（2）
IPC小类 C23C（24） C01B（7） C22F（3）
C25D（3） B22F（2） C21D（2）
C30B（2） G21H（2） H01M（2）
IPC C23C016/26（24）
发明人 WANG X（24）
公开年 2022（5） 2020（4） 2021（4） 2015（3） 2016（2） 2023（2）
申请年 2021（4）  2022（4）  2016（3）  2019（3）  2020（3）  2014（2） 
专利权人 BEIJING GRAP.（5） BEIJING GRAP.（2） CHINA NUCLEA.（2） INST MICROEL.（2）
SHANGHAI INS.（2） UNIV PEKING（2）

Preparing pipeline joint of loading graphene useful for hydraulic pipeline joint or fuel oil pipeline joint, involves transferring graphene film in graphene film-metal foil composite material to surface of metal pipeline joint using graphene film transfer method.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparing a sponge nickel-loaded nitrogen and fluorine double-doped vertical graphene useful in e.g. preparing anode and cathode materials for lithium-sulfur batteries, comprises e.g. obtaining Ni(AC)2 aqueous solution, adding N2H4H2O and mixing to obtain reaction solution.

TU J, WANG X, QIU Z, XIA X

Method for preparing metal-graphene composite material by using electronic component, involves preparing metal-graphene composite material by hot-pressing sintering, and applying pulse current to metal substrate to perform surface heat treatment to metal substrate.

WANG X, HUO Y, LI J, CAO Z, XIAO Z

Preparing copper-based graphene composite material comprises growing graphene film on surface of copper foil by chemical vapor deposition, stacking, using ultrasonic welding technology to weld stacked components, and removing stress and annealing welded stack assembly.

WANG E, WANG X, HE M, ZHANG R, ZHAO C, HU X, LIU K, FU Y

Method for preparing substrate for growing graphene film, involves annealing metal matrix precursor before or after tungsten plating process or molybdenum plating process, and carrying out annealing treatment in protective atmosphere.

LUO G, WANG G, WANG X, LI J, ZHANG B

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Preparing ultra-thin nickel radiation source useful to prepare Schottky junction type laminated beta-radiation cell, involves dripping nickel source on surface polymethyl methacrylate/graphene film and arranging nickel nano particles in oriented mode along direction of magnetic line.

WANG X, WANG L, SU C, FENG H, CHEN Z, ZHANG J, LI P, WU W, YANG Y, ZHOU C

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Growing graphene on a special-shaped metal substrate comprises ultrasonically cleaning special-shaped metal substrate three times with acetone, ethanol and deionized water, and adding into a melamine aqueous solution and soaking.

ZHANG X, WANG X, CHEN H

Vertical graphene composite heat conducting copper foil comprises copper foil substrate layer adhered with two plane graphene layers at surface and bottom, where surfaces of plane graphene layers have vertical graphene layers.

ZHANG L, YE Q, WANG X, SHEN L