国家/地区 韩国（18）
IPC部 C（18）
IPC大类 C23（18）
IPC小类 C23C（18） C01B（14） H01L（6）
B05D（4） B32B（4） C30B（4）
B82Y（3） C25D（3） H01G（3）
B01J（2） B82B（2）
IPC C23C014/34（18）
发明人 YOON S G（3） KIM H（2） PARK B（2）
PARK B J（2） YOON S（2）
公开年 2016（4） 2011（3） 2021（3） 2017（2） 2018（2）
申请年 2016（5）  2010（3）  2020（3）  2011（2）  2015（2）  2018（2） 
专利权人 UNIV IND AC.（3） SAMSUNG ELEC.（2）

Multi-layer graphene laminate used in electronic devices, comprises catalyst metal layer and stacked structure comprising graphene layer grown on one surface of catalyst metal layer.

YOON S G, IREH H

Formation of film involves preparing substrate containing conductive film formed on base substrate, forming composite layer containing graphene layer, and electrically connecting conductive film with former film through composite layer.

NI Z, MATSUMOTO T, IFUKU R, YOU W

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Transfer-free method for producing graphene thin film involves forming titanium buffer layer on target substrate and growing graphene thin film on titanium buffer layer in which both steps are performed in oxygen-free atmosphere.

YOON S, PARK B, YOON S G, PARK B J

Manufacture of graphene sheet involves laminating nickel thin film on silicon dioxide film provided on surface of silicon substrate, laminating fullerene thin film on nickel thin film, and annealing resultant laminated structure.

JOONGKEE L, WONCHANG C, HUNGI J, CHAIRUL H, JAEYOUNG W, JIYOUNG K, JOOMAN W, AYOUNG K

Transfer-free method for forming high-quality graphene layer on graphene electrode, involves depositing titanium layer on base substrate by sputtering process, and growing graphene on deposited layer by chemical vapor deposition process.

YOON S, PARK B, YOON S G, PARK B J

Producing metal-graphene thermally conductive film, comprises forming a graphene film, and forming a composite film.

ZHANG X

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F