国家/地区 中国（21） 美国（7） 韩国（6） 日本（2）
IPC部 C（30）
IPC大类 C23（30）
IPC小类 C23C（30） H01L（9） C01B（8）
G01N（3） C23F（2） C30B（2）
G02F（2）
IPC C23C016/02（30）
发明人 HE P（4） SHIN H（4） YANG D（4）
ZHANG Z（4） BYUN K（3） BYUN K E（3）
LEE E（3） SHIN H J（3） SHIN K（3）
SHIN K W（3） CHEN Y（2） KIM C（2）
LEE C（2） LEE C S（2） LU G（2）
公开年 2020（30）
申请年 2020（15）  2019（13）  2018（2） 
专利权人 CHINA DONGFA.（4） SAMSUNG ELEC.（4） HUNAN ERLING.（2） QINGDAO FENG.（2）

Preparing high-conductivity graphene/copper composite wire, comprises electrochemically polishing copper wire, performing coil chemical vapor deposition, and doping using carbon source, reducing gas source and doping source.

LIU Y, YAO S, GUO C, FAN T

Preparing graphene film comprises e.g. providing porous material powder, placing material powder in atomic layer deposition device, depositing metal catalytic layer in atomic layer deposition device and depositing metal catalytic layer.

XIA Y, ZHUO E, LI W

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J

Method for forming a substrate for surface-enhanced Raman scattering, involves removing the first metal substrate from the graphene and the deposited metallic nanoislands to form the substrate for surface-enhanced Raman scattering.

ZARETSKI A, LIPOMI D J, SAVTCHENKO A, MOLOKANOVA E, MERCOLA M

Crystalline graphene used in display device, is obtained by performing thermal treatment involving supplying heat to inorganic substrate, introducing vapor carbon supply, and binding activated carbon to grow crystalline graphene.

SHIN H, CHOI J, WOO Y, YOON S

Forming graphene structure by preparing to-be-processed substrate, pre-processing by supplying gas containing carbon containing gas to to-be-processed substrate, and forming a graphene structure on surface of to-be-processed substrate.

IFUKU R, MATSUMOTO T, SUGIURA M, RYOTA I, TAKASHI M, MASAHITO S

Preventing laser gyro gas leakage by performing magnetron sputtering plating copper or nickel, adopting chemical vapor deposition method to grow graphene, and adopting vacuum shield method to detect helium leakage rate.

WANG F, LU G

Pre-treatment of substrate e.g. non-metal substrate such as semiconductor substrate or dielectric substrate used for forming graphene directly, involves using pre-treatment gas including carbon source and hydrogen.

SHIN K, LEE J, NAM S, SHIN H, LIM H, JUNG A, BYUN K, CHO Y, SHIN K W, LEE J H, NAM S G, SHIN H J, LIM H S, JUNG A R, BYUN K E, LEE J I, CHO Y C

In-situ growing of graphene on metal surface based on laser comprises e.g. introducing powdered metal nickel on the metal substrate using laser, pre-coating the solid carbon source on the alloy coating and irradiating using laser.

YE X, DONG R, YANG Y, SUO G, FENG L, HOU X, ZHANG L

Graphene laminate used for organic electronic device, comprises flexible substrate, metal oxide layer formed on flexible substrate, interfacial adhesion layer formed on metal oxide layer, and graphene formed on interfacial adhesive layer.

CHO K W, LEE E