国家/地区 英国（9） 世界知识产权组织（6） 台湾（4） 美国（4） 德国（2）
IPC部 C（9）
IPC大类 C23（9） C01（7） H01（6）
C30（3）
IPC小类 C23C（9） C01B（7） H01L（6）
C30B（3）
IPC C23C016/26（9）
发明人 GUINEY I（8） THOMAS S（7） DIXON S（6）
GLASS H（3） GRIFFIN R M（3） TYLER M（3）
BADCOCK T J（2） JAGT R（2） KAINTH J（2）
WALLIS R（2）
公开年 2022（5） 2021（3）
申请年 2020（3）  2021（3）  2022（3） 
专利权人 PARAGRAF LTD（9）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Forming graphene layer structure, comprises providing growth substrate having growth surface, and forming graphene layer on growth surface by chemical vapor deposition, where growth surface is formed of material e.g. yttrium-stabilized zirconia.

DIXON S, GUINEY I, THOMAS S, GRIFFIN R M, BADCOCK T J

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Wafer for CVD growth of uniform graphene at temperature in excess temperature, comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across insulating layer, where barrier layer is alumina and/or hafnium oxide layer.

JAGT R, KAINTH J, DIXON S

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M

Providing electrical contact on graphene surface, for polymer-coated graphene layer structure involves e.g. providing graphene layer structure comprising graphene layers and having polymer coating on its surface.

GLASS H, GUINEY I, TYLER M, THOMAS S

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S