国家/地区 美国（11）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C23C016/26（11）
发明人
公开年 2021（3） 2016（2） 2022（2）
申请年 2021（3）  2020（2） 
专利权人 APPLIED MATE.（3）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Graphene deposition process for deposition of graphene on substrates, involves generating radio frequency plasma at location proximate to substrate, while flowing precursor gas containing carbon through plasma and over substrate.

CHEN Z, CHUGH S, MEHTA R

Graphene film manufacturing device comprises wrinkles flattening device, base substrate, graphene film, porous adsorption member, hollow space and vacuum suction port.

WAN S K, HEE H J, HEE H B, KIM W S, HAN J H, HONG B H

Copper substrate for growing graphene monolayer has second copper layer in contact with first copper layer, and has second copper percentage, second oxygen percentage and second average thickness.

YAGER T A, ROBINSON J

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y