国家/地区 韩国（13）
IPC部 C（13）
IPC大类 C23（13） H01（10） C01（9）
B32（2）
IPC小类 C23C（13） C01B（9） H01L（8）
B32B（2）
IPC C23C016/26（13）
发明人 LEE C S（4） BYUN K（3） BYUN K E（3）
LEE C（3） AHN S J（2） AN S（2）
IFUKU R（2） KIM S（2） MATSUMOTO T（2）
OH S（2） OH S R（2） SHIN H（2）
SHIN H J（2） SHIN K（2） SHIN K W（2）
公开年 2023（9） 2022（4）
申请年 2022（13）
专利权人 SAMSUNG ELEC.（5） TOKYO ELECTR.（2） UNIV SEOUL N.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Substrate processing apparatus for manufacturing semiconductor device, comprises substrate support to support multiple substrates such that substrates are on substrate support, chamber sidewall surrounding side surface of substrate support, and upper plate having plate portions on substrate support.

OH S, AN S, LEE J, JEONG G, JUNG K O, LEE J H, AHN S J, OH S R

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S

Depositing graphene barrier film, involves placing substrate containing the titanium thin film layer into substrate processing system chamber forming processing space, supplying first reaction gas into chamber, supplying second reaction gas, and forming graphene layer on titanium thin film layer.

PARK J, LI J, JIN D, SUN W, KIM T, YIN Y, TIAN Z, BAK H, PARK J H, LEE K J, KIM D W, SUN W H, KIM T S, YOON W J, JEON J H, PARK H K, PARK H, JEONJINHO, YUN W J, WOO K D, LEE K

Manufacturing graphene useful in devices and laminate comprises growing graphene on single-crystal metal foil by supplying gaseous carbon source to single-crystal metal foil and exfoliating the graphene from single-crystal metal foil.

RUOFF R S, WANG M, DARUO

Metal-graphene composite comprises metal layer and graphene layer provided by growing directly on one surface of metal layer, where graphene layer contains two and/or more graphene thin, metal layer is copper, nickel, cobalt, iron, manganese, chromium, vanadium, titanium, platinum, gold and aluminum.

KIM D J, HONG B H, WOO Y S, KIM D, YU Y S