国家/地区 日本（11） 美国（7） 世界知识产权组织（7） 中国（4） 韩国（4） 台湾（4） 欧洲专利局（EPO）（3）
IPC部 C（12）
IPC大类 H01（12） C01（10） B82（3）
C07（3） C08（3）
IPC小类 H01L（12） C01B（10） B82Y（3）
C07C（3） C07B（2） C08G（2）
H01B（2）
IPC H01L051/05（12）
发明人
公开年 2014（8） 2013（2） 2015（2）
申请年 2013（12）
专利权人 FUJITSU LTD（2）

Carbon film e.g. graphene nanoribbon used for electroconductive element and carbon film element, comprises specific polyphenylene polymer, and has specific width or specific shape.

YAMAMOTO S, GOTO D, MIYAGAWA S

Manufacture of graphene used as channel of electronic device involves forming buffer layer made of carbon atomic layer on surface of silicon carbide layer and heating buffer layer and substrate in hydrogen atmosphere.

TANABE S, HARADA Y, TAKAMURA M, KAGESHIMA H, HIBINO H

Manufacture of substrate for electronic apparatus, involves forming silicon carbide layer on silicon substrate, planarizing upper surface of silicon carbide layer, and forming graphene layer in upper surface of silicon carbide layer.

SAI J, SUEMITSU M, FUKIDOME H, MAKABE I, NAKABAYASHI T, TATENO Y

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Synthesizing graphene nanoribbon used in e.g. field effect transistor or bipolar junction transistor, comprises polycyclization of linearly conjugated aryl compounds to provide graphene nanoribbon precursor.

KLEIN J P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Composition, useful to manufacture film used in transmissive electrode for organic electronic device, comprises, in solvent preparation, non-tubular graphene material, electrically conductive polymer including polythiophenes, and additive.

VIVILLE P, SOLOUKHIN V, KHOUSAKOUN E, DELIGNE N, COPPEE S, GRIVEI E, LAZZARONI R

Method for producing graphene nanoribbon, involves forming crystalline catalytic metal layer on plane of a magnesium aluminate single-crystal substrate or magnesium oxide single-crystal substrate, and growing graphene on exposed side wall.

NOZAWA K, ODAGAWA A