国家/地区 美国（45）
IPC部 C（45）
IPC大类 C01（45）
IPC小类 C01B（45）
IPC C23C016/56（45）
发明人 CHOI J（4） SHIN H（3） THOMAS S（3）
ZHANG K（3） BEDWORTH P V（2） CHOI J Y（2）
DENG P（2） GLASS H（2） GUINEY I（2）
GUO H（2） HEISE S E（2） IFUKU R（2）
KIM C（2） LEE C S（2） LEE S（2）
公开年 2012（7） 2017（7） 2021（7） 2013（6） 2016（4） 2009（2） 2010（2） 2014（2） 2020（2） 2022（2）
申请年 2011（6）  2016（6）  2013（5）  2020（5）  2012（4）  2014（3）  2021（3）  2022（3）  2008（2）  2009（2）  2015（2）  2017（2） 
专利权人 SAMSUNG ELEC.（6） ZHANG K（3） CENT NAT REC.（2） COMMISSARIAT.（2）
DENG P（2） EMPIRE TECHN.（2） GUARDIAN GLA.（2） GUARDIAN IND.（2）
GUO H（2） LEI T（2） LOCKHEED MAR.（2） PARAGRAF LTD（2）
TOKYO ELECTR.（2） UNIV CALIFOR.（2） UNIV SINGAPO.（2） UNIV XIDIAN（2）
ZHANG Y（2）

Manufacturing electrostatic self-assembled silicon/reduced graphene oxide (rGO)/carbon nanofibers composite as anode materials for lithium-ion battery, involves obtaining silicon (Si)-(3-aminopropyl)triethoxysilane (APTES) solution by adding predetermined silicon nanoparticles to piranha solution.

CONG R, LEE C S, LEECHANGSUP, FEMALE T

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Preparing nanoparticles on a substrate for composite, involves depositing micro-sized particles or salt precursors on a substrate, and applying a rapid, high temperature thermal shock to the substrate and the micro-sized particles or the salt precursors.

YAO Y, CHEN Y, HU L

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Producing polymer-coated graphene layer structure involves e.g. adding substrate to reaction chamber, supplying flow comprising precursor compound to form graphene layer structure, heating and spin-coating using polymer or polymer precursor.

GLASS H, GUINEY I, TYLER M, WALLIS R, THOMAS S, TAYLOR M

Production of electronic device such as integrated circuit board, involves providing substrate, supplying flow comprising precursor compound, selectively laser ablating graphene, and selectively laser ablating surface of substrate.

GLASS H, GUINEY I, TYLER M, WALLIS R, BAINES R, THOMAS S