国家/地区 世界知识产权组织（24）
IPC部 C（24）
IPC大类 C01（24）
IPC小类 C01B（24）
IPC C01B031/04（19） C23C016/26（18） C01B031/02（16）
C01B032/186（8） B82Y030/00（7） B82Y040/00（7）
C23C016/02（5） C23C016/44（4） C23C014/34（3）
H01G009/042（3） H01G011/36（3） H01L021/20（3）
B01J019/18（2） B82Y010/00（2） C08K003/04（2）
发明人 JUNG M（2） MOON J（2） YOON J（2）
YOON J H（2）
公开年 2014（24）
申请年 2013（11）  2014（9）  2012（4） 
专利权人 HANWHA TECHW.（2） LG ELECTRONI.（2） NIPPON MININ.（2） SAMSUNG TECH.（2）
SHENZHEN CHI.（2） SNU R DB FO.（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Producing graphene by plasma-enhanced chemical vapor deposition, comprises applying potential and exciting plasma-forming gas between metal substrate and carbonaceous electrode, ablating reactive carbon species, and growing graphene.

SINTON S W, BEDWORTH P V

Making multiwalled carbon nanotube used in circuit of conductive tip device, by depositing nanoplot made of catalyst material on substrate, and growing nanotube and graphene plane at apex of nanotube by depositing carbon in vapor phase.

LEGAGNEUX P, GANGLOFF L, MAZELLIER J P, ANDRIANIAZY F, COJOCARU C, MAURICE J L, MAZELLIER J, COJOCARU C S, MAURICE J

Copper foil used in manufacture of graphene, has preset surface roughness, and contains copper plating layer and/or copper sputter layer.

KOHIKI MICHIYA, SAKAGUCHI KAZUHIKO, KOHIKI M, SAKAGUCHI K, MICHISHITA N

Preparing carbon nanotube-graphene composite, comprises inserting carbon nanotube chemical vapor deposition catalyst between stacked graphene sheets, heating nanotube chemical vapor deposition catalyst, growing and cooling carbon nanotubes.

HE P

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A