国家/地区 世界知识产权组织（17）
IPC部 C（17）
IPC大类 C01（17）
IPC小类 C01B（17）
IPC C01B031/04（12） C23C016/26（12） C01B032/186（9）
C01B032/182（6） C01B032/194（6） B82Y040/00（5）
B32B009/00（4） C01B031/02（4） C01B032/184（4）
C23C016/50（4） B32B018/00（3） B82Y030/00（3）
C23C016/01（3） H01L029/16（3） C01B032/18（2）
发明人
公开年 2016（17）
申请年 2015（11）  2014（3）  2016（3） 
专利权人 SNU R DB FO.（2） UNIV SEOUL N.（2）

Obtaining material deposited on substrate by plasma-assisted chemical vapor deposition used as component of window or touch panel and as component in protection system, involves forming one or more graphene layers.

MUNOZ GOMEZ R, GARCIA HERNANDEZ M D M, GOMEZALEIXANDRE FERNANDEZ C, GOMEZ R, HERNANDEZ M D M, FERNANDEZ C, MUNOZ G R, GARCIA H M D, GOMEZALEIXANDRE F C

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Low-reflection graphene used in e.g. optical component, comprises graphene layer having surface parallel to specific direction, and another graphene layer in direction which intersects specified direction, where both layers form recess.

UEKUSA K, SHIMADA N, YAZAWA K, YAMADA T, HASEGAWA M, SHIMADA NAYUTA, YAZAWA KENJI, YAMADA TAKATOSHI, HASEGAWA MASATAKA, UEKUSA KAZUTERU

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G