国家/地区 世界知识产权组织（23）
IPC部 C（23）
IPC大类 C01（23）
IPC小类 C01B（23）
IPC C01B032/186（23）
发明人 DING G（2） DIXON S（2） GUINEY I（2）
LIU X（2） WANG H（2） XIE X（2）
公开年 2021（4） 2015（3） 2011（2） 2012（2） 2014（2） 2016（2） 2017（2） 2022（2） 2023（2）
申请年 2020（4）  2012（3）  2015（3）  2022（3）  2013（2）  2014（2）  2016（2） 
专利权人 PARAGRAF LTD（2） SHANGHAI INS.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Film formation method involves forming metal film on silicon-containing film of substrate, forming a graphene film on metal film, where metal film is silicided by heating metal film, and continuously performing film forming process.

UEDA H, WADA M, ZHEN

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Manufacture of graphene-based device used for e.g. gas sensor, involves providing graphene assembly, transferring graphene assembly to substrate, using photolithography and removing UV barrier layer and photoresist layer.

MIGLIORATO M, KUMAR R, MONTEVERDE U

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J