国家/地区 美国（14）
IPC部 C（14）
IPC大类 C01（14）
IPC小类 C01B（14）
IPC C30B001/02（14）
发明人 JANG B Z（4） XIONG W（3） ZHAMU A（3）
公开年 2014（3） 2012（2） 2015（2） 2018（2）
申请年 2012（2）  2014（2）  2017（2）  2020（2） 
专利权人 NANOTEK INST.（4） JANG B Z（2） XIONG W（2） ZHAMU A（2）

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Production of graphene/semiconductor nanowire hybrid material composition for electrode, involves preparing catalyst metal-coated mixture using semiconductor particles made of e.g. tin and/or indium, and growing semiconductor nanowires.

JANG B Z

Heat dissipation system used in e.g. power tool and microelectronic or telecommunication device, comprises heat spreader comprising unitary graphene monolith comprising closely packed and chemically bonded parallel graphene oxide planes.

ZHAMU A, XIONG W, JANG B Z

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Production of unitary graphene layer or graphene single crystal for use as heat spreader involves preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, removing fluid medium, and heat-treating graphene.

ZHAMU A, XIONG W, JANG B Z

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Graphene sheet for manufacturing electronic device, e.g. electrode or transistor, and display, e.g. organic light emitting diode (OLED), comprises regularly or irregularly patterned and thickness modulated structure on graphene surface.

KAYA I I, YANIK C, *YANIK CENK, *KAYA ISMET INONU

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z