国家/地区 美国（25）
IPC部 B（25）
IPC大类 B01（25）
IPC小类 B01J（25）
IPC B01J019/08（25）
发明人 SHIN H（3） SHIN H J（3） CHOI J（2）
CHOI J Y（2） HAN G（2） HAN G H（2）
KIM S（2） LEE Y（2） LEE Y H（2）
WALTERS D（2）
公开年 2013（5） 2012（4） 2015（3） 2014（2） 2016（2） 2017（2） 2021（2） 2022（2）
申请年 2011（5）  2014（4）  2012（3）  2013（3）  2015（2）  2016（2）  2022（2） 
专利权人 SAMSUNG ELEC.（3） CALIFORNIA I.（2） HANWHA TECHW.（2） PERPETUUS RE.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Applying functional compound on sulfur particles for forming treated sulfur particles, involves using coating composition containing inorganic electroconductive compound, electroconductive carbon compound and organic precursor compound.

HAVERMANS D, SALLARD S, SHAFIQUE A, VANGENEUGDEN D, VANHULSEL A, HARDY A, SALAH S, SHAFIK A, VAN GENUGDEN D, HARDY N

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

Treating particles for repairing defects in fullerene or graphene containing nanoparticles involves disaggregating, deagglomerating, exfoliating, cleaning, functionalizing, doping, decorating and/or repairing particles.

BUCKLAND J, WALTERS D

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Membrane for providing selective permeability in filtration applications, comprises sheet of graphene-based material having perforations with specified pore size, non-graphenic carbon-based material, and contact areas between materials.

SWETT J L, BEDWORTH P V, HEISE S E, SINTON S W, SIMON S M, BULLOCK S E, LIU H, SINSABAUGH S L

Formation of patterned magnetic graphene for high density data storage involves transferring or growing graphene film on substrate, functionalizing, hydrogenating to form fully hydrogenated graphene, and manipulating hydrogen content.

LEE W K, WHITENER K E, SHEEHAN P E

Graphene producing device has cathode and anode which are configured to create arc discharge producing flux stream, and to deposit material from flux stream on substrate.

KEIDAR M, SHASHURIN A

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D