国家/地区 美国（9）
IPC部 C（9）
IPC大类 C01（9） H01（9） B82（4）
C23（3） B05（2） B32（2）
IPC小类 C01B（9）
IPC H01L021/20（9）
发明人 CHOI B（2） CHOI B L（2） LEE E（2）
LEE E K（2） WHANG D（2） WHANG D M（2）
公开年 2011（6） 2010（2）
申请年 2010（9）
专利权人 SAMSUNG ELEC.（4）

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Producing graphene nanoribbons, useful in graphene nanoribbon device, comprises heating closed carbon nanostructures, dispersing and agitating obtained nanostructures in organic solvent (1,2-dichloroethane), and recovering the nanoribbons.

DAI H, JIAO L

Method of manufacturing graphene used for electronic device, involves forming graphene directly on germanium layer by supplying carbon-containing gas into chamber in which substrate is located.

LEE E, CHOI B, WHANG D, LEE J, CHOI B L, LEE E K, LEE J H, WHANG D M

Manufacture of graphene used for e.g. photovoltaic cell, involves exposing graphite oxide to source of ultraviolet light, visible light and/or infrared radiant energy.

ELSHALL M S, ABDELSAYED V, ALRESAYES S I, ALOTHMAN Z A M, MOUSSA S, MOHAMED M B

Material used in electrical device such as solar cell comprises graphene; and inorganic material having crystal system, where at least one crystal plane of the inorganic material is oriented parallel to the plane of the graphene.

CHOI J, CHOI W, CHOI D, KIM S, SHIN K, CHOI J Y, CHOI W M, CHOI D H, KIM S W, SHIN K S

Composite structure useful in logic device, memory device and supercapacitor, comprises first graphene, second graphene separated apart from first graphene, one-dimensional nanostructure, and substrate on which graphenes is disposed.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, KIM B S, LEE E K, WHANG D M

Graphene device e.g. graphene-based inverter has electrodes and graphene channel which are formed on upper oxide layer formed on embedded gate.

HEO J S, SEO S, KIM D, WOO Y, CHUNG H, JEONG H J, KIM T C, SEO S A, U Y S, CHUNG H J, KIM D C, WOO Y S, HEO J

Releasing graphene layer from substrate, comprises forming graphene layer on surface of first substrate, forming metal layer on a surface of graphene layer and applying a pulling force on the metal layer to detach graphene layer.

OGIHARA M, SAGIMORI T, SAKUTA M, HASHIMOTO A, TANAKA S, OGIWARA M, MITSUHIKO O, TOMOHIKO S, MASAAKI S, AKIHIRO H

Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.

FUJITA JUNICHI, FUJITA J I, FUJITA J