国家/地区 美国（15） 中国（12） 韩国（8） 世界知识产权组织（8） 欧洲专利局（EPO）（6） 日本（4） 英国（3） 台湾（2）
IPC部 C（23）
IPC大类 C01（23） H01（23） B82（13）
C23（6） C30（5） B32（3）
IPC小类 C01B（23）
IPC H01L021/02（23）
发明人 DENG P（7） GUO H（7） LEI T（7）
ZHANG K（7） ZHANG Y（7） ZHANG F（5）
BOL A A（2） DONG G（2） KELBER J（2）
KELBER J A（2）
公开年 2012（14） 2013（9）
申请年 2012（23）
专利权人 UNIV XIDIAN（7） INT BUSINESS.（3） UNIV NORTH T.（3） KELBER J（2）
RIJKSUNIV LE.（2） SAMSUNG ELEC.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Composition, useful in an electronic device, spintronic device or optoelectronic device, comprises ordered film of boron nitride containing multiple layers, where the film has a major surface, and a layer of graphene formed on major surface.

KELBER J A

Epitaxial structure used in light emitting device e.g. LED based on group III-V nitride semiconductor e.g. gallium nitride, comprises substrate, epitaxial layer disposed on substrate, and graphene layer disposed between substrate and layer.

WEI Y, FAN S

Semiconductor device i.e. graphene FET, has graphene layer formed on doped semiconductor substrate and contacts and for serving channel layer for FET, where doped semiconductor substrate serves as back gate for FET.

BOL A A, FRANKLIN A D, HAN S

Forming graphene film (on surface of substrate) used in e.g. lasers, comprises locating carbon source at or in vicinity of surface, controlling ambient conditions, applying temporary change of condition at localized site and controlling.

DONG G

Forming graphene film on copper-containing substrate surface involves heating and exposing substrate to carbon-containing precursor gas and cooling to segregate dissolved carbon atom and selecting substrate to control graphene film depth.

DONG G, RIJN R V

Method for forming composition of matter to control macroscopically continuous single and multiple layer graphene films, involves forming layers of graphene on metal oxide opposite major surface of metal by carbon molecular beam epitaxy.

KELBER J, KELBER J A

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T