国家/地区 韩国（29）
IPC部 C（29）
IPC大类 C01（29） H01（4）
IPC小类 C01B（29）
IPC C01B031/04（29） H01L041/22（4） C01B031/02（3）
H01L041/18（3） H01L041/08（2）
发明人 LEE Y T（29）
公开年 2016（26） 2015（3）
申请年 2014（29）
专利权人 LEE Y T（29）

Transistor has first insulation layer that surrounds graphene bending circuit, and source that is extended in graphene bending circuit and first wafer, and contacts that are extended to second insulation layer.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory comprises source electrode and insulating material layer.

LEE Y T

Manufacture of graphene-grown substrate for electronic component, involves forming metal layer on substrate, supplying gas containing carbon and etching gas and performing electron cyclotron resonance chemical vapor deposition.

LEE Y T

Producing non-catalytic graphene grown substrate useful to produce electrical component comprises e.g. providing substrate with substrate layer, supplying carbon-containing gas and growing graphene on substrate without having catalyst layer.

LEE Y T

Manufacture of graphene-grown substrate used in manufacture of electronic component, involves forming substrate having substrate layer, depositing by supplying carbon-containing gas, adsorbing hydrocarbon radicals, and growing.

LEE Y T

Manufacture of graphene-grown low-temperature substrate involves forming non-catalytic layer on substrate, supplying carbon-containing gas and etching gas, performing inductively-coupled plasma chemical-vapor deposition and processing.

LEE Y T

Producing low-temperature graphene grown substrate useful to produce electrical component, comprises e.g. supplying carbon-containing gas, performing inductively coupled plasma-chemical vapor deposition and growing graphene on substrate.

LEE Y T

Producing non-catalytic substrate growing graphene, comprises e.g. providing substrate, supplying carbon-containing gas on substrate, performing low-pressure chemical vapor deposition, and diffusing hydrocarbon radicals to grow graphene.

LEE Y T

Producing low-temperature graphene grown substrate useful to produce electrical component, comprises e.g. supplying carbon-containing gas, performing inductively coupled plasma-chemical vapor deposition and growing graphene on substrate.

LEE Y T

Manufacturing substrate graphene growth involves taking substrate and then feeding carbon-containing feed gas through electron cyclotron resonance microwave plasma enhanced chemical vapor deposition.

LEE Y T