国家/地区 韩国（27） 美国（27） 中国（18） 日本（13） 世界知识产权组织（13） 欧洲专利局（EPO）（8） 台湾（4） 澳大利亚（3） 加拿大（3） 新加坡（3） 波兰（2）
IPC部 C（54）
IPC大类 C01（54） C23（54） H01（20）
B01（8） C30（8） B82（6）
B05（5） C03（5） B32（4）
C25（3） G01（3） A61（2）
B81（2） C09（2） D06（2）
IPC小类 C01B（54）
IPC C23C016/26（54）
发明人 LEE Y T（9） AIDA H（5） AOTA N（5）
LIU X（3） BABUL T（2） BARANOWSKI M（2）
BEDWORTH P V（2） HEISE S E（2） JONCZYK S（2）
KONDEJ A（2） LEE S H（2） LIPOMI D J（2）
OBUCHOWICZ Z（2） SHI H（2） SINTON S W（2）
公开年 2017（28） 2016（20） 2018（5）
申请年 2016（54）
专利权人 LEE Y T（9） NAMIKI SEIMI.（5） CORNING INC（3） CHINESE ACAD.（2）
KOREA INST S.（2） LOCKHEED MAR.（2） SAMSUNG ELEC.（2） UNIV CALIFOR.（2）

Producing carbon structures containing graphene on surface of spatially shaped metal elements made of copper or its alloys, in chemically active gas working atmosphere containing inert shielding gas, by soaking materials in sealed retort.

BABUL T, OBUCHOWICZ Z, JONCZYK S, BARANOWSKI M, KONDEJ A

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H

Large area graphene growth apparatus has second heater that is installed at lower portion of chamber, and second heater driving unit is configured to adjust position of second heater with respect to chamber.

GI C K, CHEOL K G

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Producing graphene structure useful for transistor and photo detectors, comprises e.g. forming an aluminum pattern on a substrate, forming a graphene layer on substrate and aluminum pattern, and depositing a metal layer on graphene layer.

DONG J L, JONG C Y

Preparation of large size graphene glass involves cleaning large size quartz glass, putting in high temperature tubular furnace, pumping reaction chamber, introducing argon gas and hydrogen gas, and reducing temperature to room temperature.

LIU Z, CHEN X, ZHANG Y

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Manufacture of graphene used for transparent electrode, involves growing graphene on growth substrate using plasma device, transferring graphene to target substrate, removing impurities from graphene, and doping graphene with dopant.

KIM S H, KOO B H, PARK K S

Manufacture of separator used for polymer electrolyte fuel cell, involves forming graphene film on surface of stainless steel in film-forming apparatus at preset temperature by microwave plasma chemical vapor deposition method.

KUMAGAI M, YOSHINO I, UMENO M, UCHIDA H