国家/地区 美国（23） 世界知识产权组织（18） 韩国（13） 中国（12） 日本（6） 欧洲专利局（EPO）（3） 西班牙（2） 台湾（2）
IPC部 C（38）
IPC大类 C01（38） C23（38） H01（13）
B82（9） B01（7） B32（3）
C30（3） C09（2） G09（2）
IPC小类 C01B（38）
IPC C23C016/26（38）
发明人 CHOI J（2） HAYASHI K（2） JUNG M（2）
LEE Y（2） MOON J（2） SHI Y（2）
公开年 2014（38）
申请年 2013（21）  2014（12）  2012（5） 
专利权人 LG ELECTRONI.（2） SAMSUNG ELEC.（2） SHENZHEN CHI.（2） SHI Y（2）

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Synthesizing graphene involves immersing flat nickel metal substrate into homogenized precursor solution containing organic solvent and metal salt to obtain finished product.

YOSHIDA M M, MADRID P A, BUSTAMANTE F P, BUSTAMANTE R P

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing graphene structure of 1-5 layers or controlling number of layers, involves introducing common substrate or substrate with powdered metal or substrate with definite pattern of metal inside reactor for chemical vapor deposition.

BERTRAN SERRA E, FREIRE SOLER V M, RAMIREZ SANCHEZ A, PASCUAL MIRALLES E, ANDUJAR BELLA J L

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Graphene growth method involves sequentially forming conductor layer, insulating layer, carbon layer and semiconductor layer, applying voltage between semiconductor layer and conductive layer, heating, and growing carbon layer.

CHOI J W

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Producing graphene by plasma-enhanced chemical vapor deposition, comprises applying potential and exciting plasma-forming gas between metal substrate and carbonaceous electrode, ablating reactive carbon species, and growing graphene.

SINTON S W, BEDWORTH P V