国家/地区 美国（18） 中国（15） 韩国（12） 世界知识产权组织（12） 欧洲专利局（EPO）（8） 日本（8）
IPC部 C（26）
IPC大类 C01（26） H01（26） B82（15）
C23（5） B05（3） B32（3）
B01（2）
IPC小类 C01B（26）
IPC H01L021/02（26）
发明人 DENG P（7） GUO H（7） LEI T（7）
ZHANG K（7） ZHANG Y（7） ZHANG F（5）
CHOE P（2） CHOI B（2） CHOI B L（2）
CHOI J（2） CHOI J Y（2） HIURA H（2）
HWANG T（2） LEE E（2） LEE E K（2）
公开年 2012（26）
申请年 2012（14）  2011（11） 
专利权人 UNIV XIDIAN（7） SAMSUNG ELEC.（4） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3）
GRAPHENE SQU.（2） NAT INST MAT.（2） NEC CORP（2） UNIV SUNGKYU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for forming one-to-four-monolayer graphene layer on metal layer in manufacturing, e.g., magnetic tunnel junction (MTJ) spin filters for magnetoresistive RAM, by inducing segregation of carbon in metal layer to surface of metal layer.

KELBER J, ZHOU M, MI J U

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Improving electrical characteristics of graphene device, involves providing graphene device with ferroelectric film on substrate having graphene layer and applying specified voltage on graphene device.

GANG B S, HUI H B, HYEON A J

Preparing structured graphene, comprises cleaning silicon substrate and vacuumizing, introducing propane into the substrate to carbonize, performing heteroepitaxial growth, and cooling the epitaxial cubic silicon carbide film.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Three-dimensional graphene structure useful as next-generation material for electronic device e.g. display device and transparent electrode for solar cell comprises a layer of graphene having periodically repeated three-dimensional shape.

SHIN H, CHOI J, PARK J, AHN J, AHN J R, CHOI J Y, PARK J H, SHIN H J

Graphene heterostructure used for electronic components used in electronic circuits, and for electronic devices, consists of graphene layer positioned between two encapsulation layers.

GEIM A K, NOVOSOLEV K S, GORBACHEV R V, PONOMARENKO L A, GEIM A, NOVOSELOV K, GORBACHEV R, PONOMARENKO L, NOVOSELOV K S

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide wafer surface, scribing graphics window, reacting carbon tetrachloride with naked silicon carbide, putting wafer on copper film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene by depositing silicon dioxide layer on silicon carbide surface, etching pattern window, reacting silicon carbide with chlorine, removing silicon dioxide outside window, putting on copper film and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structural graphene for microelectronic devices, involves growing carbon-silicon carbide thin film and silica layer on substrate, forming nickel film on other sample, placing silica layer on nickel film, and annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F