国家/地区 美国（16） 日本（10） 世界知识产权组织（9） 中国（8） 欧洲专利局（EPO）（6） 韩国（6） 印度（2）
IPC部 C（18）
IPC大类 C01（18） H01（18） B82（8）
B32（4） C23（4） B01（2）
B05（2） C08（2） C30（2）
IPC小类 C01B（18）
IPC H01L021/02（18）
发明人 JEON I（2） JUNG S（2） SATO S（2）
公开年 2015（18）
申请年 2015（10）  2014（5）  2013（3） 
专利权人 FUJITSU LTD（3）

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Graphene structure for electronic component e.g. transistor, comprises two-dimensional base graphene layer having defect, and linking material formed at defect of base graphene layer.

SUNG M, KIM S, MO S M, KIM S J, CHENG M

Method for forming workpiece of e.g. electronic device, involves removing layer of material on top of graphene surface in predetermined pattern, and releasing graphene from catalytic film such that graphene is in form of patterned layer.

JOHNSON A T, GUDIBANDE R R, QI Z J, JOHNSON A, GUDIBANDE R, QI Z

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Particle for particulate material used for composite material, particle dispersion and article comprises stacked sub-structures in which each sub-structure includes stack of graphene layers.

WALTERS I, WALTERS D

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Making layer of graphene, comprises depositing layer of amphiphilic compounds having different chemical compositions onto substrate, allowing the layer to self-assemble into self-assembled monolayer onto substrate and heating.

MALIAKAL A J

Boron/nitrogen co-doped graphene used for semiconductor for electronic circuit for field-effect transistor, is obtained by chemically bonding alkali metal or alkaline earth metal of specified group with carbon precursor, and doping.

BAEK J, JUNG S, JEON I, JONG B B, MIN J S, YUP J