国家/地区 美国（10） 世界知识产权组织（7） 中国（3） 日本（2） 韩国（2）
IPC部 B（10）
IPC大类 B32（10）
IPC小类 B32B（10）
IPC C01B031/04（10） B82Y040/00（6） B82Y030/00（4）
C01B031/02（4） B05D005/12（3） B32B003/10（3）
C01B032/194（3） B05C003/20（2） B05D005/00（2）
B29C047/00（2） B32B005/00（2） B32B009/00（2）
B32B009/04（2） B82B003/00（2） C23C016/56（2）
发明人 MILLER S A（4） YAGER T A（3） CRUZ C A（2）
MILLER S（2）
公开年 2012（3） 2013（2） 2014（2）
申请年 2011（3）  2013（2） 
专利权人 EMPIRE TECHNOLOGY DEV LLC（10）

System used to at least partially alter defect area in layer of graphene, on substrate, comprises chamber to receive layer including some graphene and defect areas in graphene, and container to e.g. react substrate to produce cationic area.

MILLER S A, YAGER T A

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Apparatus used to produce graphene, comprises multilayer coextrusion device comprising many series coupled layer multiplication dies to exfoliate graphene by coextrusion of first and second processing materials.

CRUZ C A

Repairing graphene, comprises applying first and second reactive material to first and second sides of the graphene layer, and reacting the reactive materials in the hole to produce a plug in the hole and to repair the graphene layer.

MILLER S A, DUERKSEN G L

Partially altering defect area in a layer on substrate involves reacting substrate under reaction conditions to produce cationic area in exposed areas; adhering graphene oxide to cationic area to produce graphene oxide layer; and reducing.

MILLER S, YAGER T, MILLER S A, YAGER T A

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Apparatus useful for e.g. producing graphene from graphite, comprises multilayer co-extrusion device comprising many series-coupled layer multiplication dies, and configured to exfoliate graphene by co-extrusion of processing material.

CRUZ C A

Graphene structure for electronic device elements, contains graphene fixed to substrate in which bonding is formed between portion to which hydrophilic process is performed, or portion to which hydrophilic process is not performed.

SANDHU A