国家/地区 中国（49） 美国（28） 韩国（23） 世界知识产权组织（22） 日本（12） 台湾（10） 欧洲专利局（EPO）（9） 德国（3） 法国（2） 英国（2） 俄罗斯（2）
IPC部 C（98）
IPC大类 C01（98）
IPC小类 C01B（98）
IPC C23C016/26（50） C01B032/186（38） C01B032/194（28）
C23C016/02（16） B82Y030/00（14） C01B032/184（13）
C23C016/44（12） B82Y040/00（11） H01L021/02（10）
C01B032/198（8） C23C016/50（8） C23C016/56（8）
C01B032/182（7） C23C016/455（7） H01M004/38（7）
发明人 LEE C（4） LEE E（4） LI Y（4）
SHIN H（4） BYUN K（3） LEE C S（3）
LI X（3） LIU J（3） MATSUMOTO T（3）
SHIN H J（3） WANG J（3） WANG X（3）
XU S（3） BYUN K E（2） CHEN H（2）
公开年 2021（44） 2022（44） 2023（10）
申请年 2021（98）
专利权人 SAMSUNG ELEC.（4） TOKYO ELECTR.（4） APPLIED MATE.（3） DAEJOO ELECT.（2）
PARAGRAF LTD（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2） YAZAKI CORP（2）

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Cathode active materials useful for secondary batteries, comprises carbon-based base material, silicon layer formed on carbon-based base material, and graphene provided on outside of silicon layer.

CHAE S

Synthesizing surface of aluminum oxide graphite for high-purity carbon materials, comprises e.g. raising temperature of reactor, placing aluminum oxide nanoparticles in inner center of reactor, and injecting reaction gas into reactor.

KIM C D, NAMKEE S

Flexible graphene thin film used for transparent electrode devices, comprises flexible substrate, titanium buffer layer grown on one side of flexible substrate by sputtering and graphene thin film layer grown in-situ in same equipment.

YOON S G, IREH H

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Controlling stress of amorphous carbon film, comprises depositing first amorphous carbon layer on substrate, and stacking graphene layer on amorphous carbon layer, and depositing second amorphous carbon layer on graphene and carbon layer.

KIM K

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U