国家/地区 中国（37）
IPC部 C（37）
IPC大类 C01（37）
IPC小类 C01B（37）
IPC C23C016/26（21） C01B032/186（18） C01B032/194（13）
C01B032/184（11） C01B032/182（9） B82Y030/00（7）
C01B031/04（7） B82Y040/00（6） C23C016/01（5）
C23C016/56（5） C23C018/16（4） H01L029/16（4）
B32B009/00（3） B32B038/10（3） C01B031/02（3）
发明人 LIU X（3） ZHANG J（3） HUANG Y（2）
JANG B Z（2） LI T（2） TANG Y（2）
YANG J（2） ZHAMU A（2） ZHANG H（2）
公开年 2017（37）
申请年 2016（20）  2017（15）  2015（2） 
专利权人 SHANGHAI INS.（3） CORNING INC（2） JANG B Z（2） NANOTEK INST.（2）
ZHAMU A（2）

Preparing large size and high quality graphene based on self-limiting nucleation growth comprises e.g. polishing the copper foil, depositing and covering with nickel metal, adding the covered nickel metal copper foil into growth chamber.

ZHANG A, YANG M, CHEN J, ZHAO Y, WEI W, ZHANG X

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Production of graphene film involves setting up vacuum chamber, conveying graphene foil tape, heating between conveying mechanisms, turning on power supply assembly, connecting to gas nozzles, and heating graphene foil tape.

LI L, ZHOU Z, PU H

Device used e.g. for etching continuous substrate and graphene comprises feeding and etching device.

ZHANG H, LI T, TAN H

Rolling device for preparing graphene film to roll comprises e.g. double-layer quartz pipe, unreeling vacuum chamber, reeling vacuum chamber, plasma generator, tubular furnace and double-layer quartz pipe.

ZHANG J, LUO J, XIONG L, GUO W

Preparation of controllable three-dimensional graphene involves preparing computer-aided design model, constructing prepared model by additive manufacturing methods to obtain three-dimensional resin structure, and plating.

CHEN P, LI Z, SHI Y, YAN C, YANG L

Continuous method for preparing film comprising graphene, involves advancing metal substrate having graphene-comprising layer out of processing chamber, and separating graphene-comprising layer to form film comprising graphene.

HARUTYUNYAN A, HARUTYUJAN A

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Chemical vapor deposition process for forming foam-like structure, involves causing decomposition of organometallic compound vapor into metal particles, and precursor gasses into graphene domains and/or hexagonal-boron nitride domains.

LOEBLEIN M, TSANG S H, TEO H T E, TSANG S, ZHANG H