国家/地区 中国（25）
IPC部 C（25）
IPC大类 C30（25） C23（9） H01（7）
C01（3）
IPC小类 C30B（25）
IPC C30B025/18（10） C30B029/02（8） C30B029/40（7）
C30B025/00（5） H01L021/02（5） C23C016/26（4）
C30B029/04（4） C23C014/35（3） C30B025/16（3）
C23C014/06（2） C23C016/02（2） C23C016/56（2）
C30B011/00（2） C30B028/14（2） C30B029/08（2）
发明人 LI L（3） GUO Y（2） HE Y（2）
LIU F（2） WANG B（2） WU H（2）
YANG J（2） ZHANG J（2）
公开年 2022（25）
申请年 2022（25）
专利权人 BEIJING TONG.（2） SHANGHAI INS.（2） UNIV PEKING（2）

Reusing garnet substrates in single crystal epitaxial growth, comprises cleaning garnet single crystal substrate, forming double-layer graphene structure on cleaned garnet single crystal substrate, using pulsed laser deposition method to grow garnet seed crystal layer on single crystal substrate.

ZHANG H, ZHANG Y, YU J, ZHANG D, LI H, YANG Q

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparing metal/graphene/polycrystalline diamond film particle detector used in field of nuclear physics, comprises depositing layer of graphene on surface of patterned metal substrate as ohmic contact electrode layer and growing diamond film in situ on graphene, where metal substrate is copper foil.

XIONG Y, WANG B

Epitaxial gallium nitride (GaN) with diamond as substrate comprises diamond substrate, single-layer or multi-layer graphene layer arranged on diamond substrate, aluminum nitride layer sputtered on graphene layer, and gallium nitride thin film epitaxially grown on aluminum nitride.

LI X, ZHANG F

Preparing single crystal domain and polycrystalline domain graphene useful in technical field of basic research and graphene, comprises heating graphene film under an air atmosphere and annealing.

ZHENG Q, MA M, HUANG J, YU Z, HE Y

Preparing a copper single wafer, comprises e.g. performing oriented growth by taking the seed crystal as nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and fixing the single crystal copper rod on line cutting support and cutting.

XIAO L, HAN L, ZUO T, GAO Z, RU Y, XUE J

Crystal cooling device for semiconductor device, has graphite sleeve whose inner wall is provided with graphene coating, and argon system downwards conveying argon gas for cooling along outer wall of water cooling sleeve.

SHI B, WANG J, ZHONG Y, WU H

Transferring graphene film, comprises attaching transfer medium to surface of graphene thin film growing on growth substrate, peeling off growth substrate, sequentially stacking graphene film and target substrate, and applying pressure.

GUO B, QU Y, TAN H, SHEN D, WANG W

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Preparing single crystal substrate comprises forming gallium nitride porous layer on surface of sapphire substrate, depositing barrier layer e.g. silica to cover top surface of the porous layer, removing barrier layer, performing epitaxial growth of single crystal layer and separating.

LU J