国家/地区 中国（8） 美国（7） 世界知识产权组织（5） 欧洲专利局（EPO）（3） 日本（3） 韩国（3） 加拿大（2） 印度（2）
IPC部 C（12）
IPC大类 C23（12）
IPC小类 C23C（12）
IPC C30B029/02（8） C23C016/26（5） C01B032/186（4）
C23C016/02（4） C30B025/18（4） C23C014/18（3）
C23C014/30（3） C23C014/35（2） C23C014/58（2）
C23C016/04（2） C23C016/34（2） C23C016/455（2）
C23C016/50（2） C30B025/02（2） C30B029/38（2）
发明人 HU J（2） HU Y（2） LI P（2）
PAN M（2） PENG J（2） QIU W（2）
公开年 2021（7） 2020（5）
申请年 2020（12）
专利权人 UNIV NAT DEF.（2）

Coating metal workpiece e.g. electrical connector, involves exposing workpiece to carbon-containing precursor gas and hydrogen gas at preset flow rate and total gas pressure, and exposing to carbon-containing precursor gas and carrier gas.

ADAMS H J

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Two dimensional (2D) hetero structure used in article of manufacture, comprises graphene deposited on substrate and borophene coupled with graphene on substrate to form 2D borophene- graphene hetero structure.

HERSAM M C, LIU X

Nonenzymatic glucose sensor fabrication involves providing bottom substrate, preparing graphene layer on bottom substrate, depositing multiple amount of zinc oxide seed crystals on graphene layer, and then growing zinc oxide seed crystals.

CHEN H, SU W, YEH Y, CHANG C

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Ferromagnetic/graphene/ferromagnetic heteroepitaxial film has graphene layer that is directly epitaxially grown on first heteroferromagnetic layer, and second heteroferromagnetic layer is epitaxially grown on graphene layer.

PAN M, PENG J, HU Y, LI P, QIU W, HU J, CHEN D