国家/地区 中国（11）
IPC部 C（11）
IPC大类 C30（11） C01（2）
IPC小类 C30B（11）
IPC C30B025/14（11）
发明人 WANG L（3） LI Y（2） SUN H（2）
WANG C（2）
公开年 2021（3） 2011（2） 2013（2）
申请年 2021（3）  2013（2） 
专利权人 SUN H（2） UNIV NANCHAN.（2）

Elastic air-tight piece comprises elastic air-tight piece set at outlet end of preparation chamber and hermetically connected with outlet end of preparation chamber, where elastic air-tight piece is provided with conveying belt assembly.

SUN H

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Preparation chamber of scale preparation device of CVD deposited graphene, has main chamber outlet end and auxiliary chamber inlet end located below liquid level of liquid airtight tank, auxiliary chamber includes elastic airtight component.

SUN H

Growing of graphene single crystals involves growing graphene on substrate by chemical vapor deposition, and introducing oxidizing gas during growth process.

LIU Z, PENG H, CHEN B, SUN L, LI Y, LIU H, WANG Y, CAI A, DING Q, ZHAO Z

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H

Preparation of AB-stacked bilayer graphene involves performing chemical deposition on copper foil using solid or liquid hydrocarbon as carbon source, and controlling volatilization of carbon source using inert carrier gas.

WU J, WAN J, SONG L, PAN D, LI Y

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J

Single-crystal graphene preparation device has heating device that is located in cavity whose two sides are provided with air inlet and air outlet connected with one end of exhaust pipe whose other end is connected with vacuum pump.

WANG C, WANG L

Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene under a specific pressure in a flow field.

WANG C, WANG L

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O