国家/地区 韩国（13）
IPC部 C（13）
IPC大类 C30（13） H01（9） C01（8）
C23（3） B01（2） B82（2）
H05（2）
IPC小类 C30B（13）
IPC C30B025/18（7） H01L021/02（7） C01B032/186（5）
C30B029/02（5） C30B029/38（3） C30B029/64（3）
H01L033/00（3） B82Y040/00（2） C01B032/182（2）
C01B032/184（2） C01B032/194（2） C23C016/02（2）
C23C016/34（2） C30B001/02（2） C30B025/04（2）
发明人 FIMLAND B M（2） MANCEVSKI V（2） MUNSHI M（2）
VLADIMIR M（2） WEMAN H（2）
公开年 2021（13）
申请年 2020（9）  2019（2）  2021（2） 
专利权人 CRAYONANO AS（2） UNIV HANYANG.（2） UNIVERSAL MA.（2）

Production of transition metal dichalcogenide-graphene heterojunction composite involves transferring graphene onto flexible substrate, depositing transition metal layer on substrate, and injecting gas containing plasma-treated sulfur.

KIM H U, SEOK H, LEE J, KIM T, KIM T S, SEOK H H, WOO K H

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Three-dimensional carbon-metal composite material e.g. as electromagnetic wave shielding material in energy storage system, comprises metal micropowder positioned in multiple of pores of carbon-based foam.

LEE S H, RHO H K, RYU H S

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Device for synthesis of graphene has container with space for holding carbon source and entry opening, electrodes for applying electrical current through space for joule heating carbon source, and movement component for moving carbon source.

MANCEVSKI V, VLADIMIR M

Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.

PARK H B, ROH J S, JANG J K, CHANG J K

Device for converting carbon pill into graphene used for producing turbostratic graphene, comprises space between electrically conductive surfaces to support carbon pill in space, electrodes coupled to conductive surfaces and power supply.

MANCEVSKI V, VLADIMIR M

Growing single crystal graphene on a metal substrate comprises placing metal substrate and alkali metal halide in a reactor, inducing chemical vapor deposition of graphene on the metal substrate by heating.

BAKWONYIL, KIM S H

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Thin film growth structure comprises a board, fluid support layer, base that is formed on an upper surface of flowable support layer, substrate, and flowable support layer which is thin film formed of material that maintains a liquid state.

LEE I, WUK L W