国家/地区 美国（14） 世界知识产权组织（10） 中国（7） 日本（7） 欧洲专利局（EPO）（6） 韩国（5） 台湾（4） 英国（3） 德国（2） 法国（2） 新加坡（2）
IPC部 C（18）
IPC大类 C23（18） C01（12） H01（9）
B82（8） C30（4） B01（3）
B32（3） B05（2）
IPC小类 C23C（18） C01B（12） B82Y（8）
H01L（7） C30B（4） B01J（3）
B32B（3） B05D（2） H01B（2）
IPC C23C016/02（18）
发明人
公开年 2013（18）
申请年 2013（9）  2012（7）  2011（2） 
专利权人

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

Producing graphene used in graphene-copper composite, involves providing copper substrate including first copper layer in contact with second copper layer and growing graphene monolayer on second copper layer by chemical vapor deposition.

ROBINSON J, YAGER T A

Formation of graphene film used for e.g. electronic device, involves performing reduction process by heating metal film in atmosphere containing hydrogen gas, carrying out graphene film growth process, and cooling.

YOSHII S, NOZAWA K, MATSUKAWA N

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, by subjecting sample to ex situ functionalization step, and subjecting sample having hydroxide terminated surface to in situ treatment.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Applying graphene coating to a substrate containing iron or aluminum, comprises providing metallic layer on a surface of substrate, and contacting metallic layer with a source of carbon atoms to provide a graphene coating on metallic layer.

KINLOCH I, LEWIS A, KING M, LEVIS A

Normal pressure chemical vapor deposition of high quality dual layer graphene thin film comprises pre-processing copper foil by using ethanol and acetone ultrasonic cleaning, introducing acetylene gas, and cooling.

LI W, QI M, REN Z, WANG H

Growing graphene by chemical vapor deposition used in electronics involves disposing metals and dielectric substrates in reactor, where gap is formed between them/introducing and heating reaction gases/depositing graphene films on substrate.

TENG P, LIN Y, CHIU P, TENG P Y, LIN Y C, CHIU P W

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Manufacturing electrical conductor, comprises providing substrate layer, depositing surface layer on substrate layer, and depositing graphene layer on substrate layer.

SULLIVAN M M E, HILTY R D, MARTENS R I, ZHENG M, HEMOND J H B, LIU Z, SULLIVAN MALERVY M E, SULLIVAN MALERVY M, HILTY R, MARTENS R, HEMOND J, SULLIVANMALERVY M E

Method for forming graphene film used for e.g. flexible electronics application, involves heating copper-containing substrate, exposing substrate to carbon-containing precursor gas to dissolve carbon atoms into substrate, and cooling.

DONG G, VAN RIJN R