国家/地区 中国（8）
IPC部 C（10）
IPC大类 C23（10）
IPC小类 C23C（10） C30B（3） C01B（2）
IPC C23C016/26（6） C23C014/02（2） C23C014/06（2）
C23C014/34（2） C23C016/01（2） C30B025/18（2）
C30B029/02（2）
发明人 ZHANG X（10）
公开年 2016（10）
申请年 2016（7）  2015（2） 
专利权人 SHANGHAI INS.（2） UNIV CHONGQI.（2）

Producing metal-graphene thermally conductive film, comprises forming a graphene film, and forming a composite film.

ZHANG X

Preparation of magnetic graphite-graphene composite film involves mixing carbon nanotubes and surfactant in water, ultrasonic dispersing, adding metal foil, ultrasonic treating, and chemical vapor depositing.

LI X, SU Z, ZHAO X, ZHAO Y, ZHANG Y, ZHANG X, WANG R

Production of composite thin film used in e.g. graphene spintronic device, involves loading graphene nanobelt on metal foil, depositing graphene, loading nano-metal oxide on resultant metal foil, and etching resultant metal foil.

LI X, SU Z, ZHAO X, ZHANG Y, ZHAO Y, ZHANG X, WANG R

Preparation of metal cobalt/graphene composite foam material used for e.g. energy storage, involves soaking polyurethane foam in acidic aqueous solution of potassium permanganate, removing, rinsing, heating and drying.

ZHAO C, CAI Y, ZHANG X, WANG W, TANG X, DENG L, QIAN X

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Metal alkene carbon thermal film useful in mobile phones, tablet personal computers, TVs and other consumer electronics products, comprises at least one layer of graphene film and at least one layer of metal film.

ZHANG X, ZENG J

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z

Touch display device comprises thin film transistor display module having thin film transistor substrate and color filter substrate, electroconductive layer on thin film transistor substrate and graphene layer on color filter substrate.

YI W, ZHANG B, ZHANG X