国家/地区 韩国（14） 美国（14） 中国（7） 世界知识产权组织（7） 印度（5） 日本（2）
IPC部 C（34）
IPC大类 C01（34）
IPC小类 H01L（34）
IPC C01B032/186（13） C23C016/26（12） H01L021/02（12）
B82Y030/00（7） B82Y040/00（7） C01B032/182（7）
C23C016/02（7） H01L021/285（6） H01L021/768（6）
H01L023/532（6） H01L029/16（5） C01B032/184（4）
C01B032/198（3） C23C016/01（3） C23C016/455（3）
发明人 SHIN K（4） SHIN K W（4） LEE C（3）
LEE C S（3） BYUN K（2） BYUN K E（2）
ELSAYED K A M（2） JUNG A（2） JUNG A R（2）
KIM K（2） LEE K（2） MAAROUF A A（2）
SHIN H（2） SHIN H J（2）
公开年 2023（34）
申请年 2022（20）  2021（11）  2023（3） 
专利权人 SAMSUNG ELEC.（5） UNIV IMAM AB.（2） UNIV SEOUL N.（2）

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Processing of photoelectric device e.g. quantum dot LED, involves providing film layer of photoelectric device, and processing surface of film layer with liquid carbon dioxide and/or solid carbon dioxide.

AO Z, ZHANG J, YAN Y, HONG J, YANG F, MO X

Manufacturing semiconductor useful in filed of power conversion devices, electric and electronic systems, comprises e.g. implanting dopant into semiconductor, capping material into two-dimensional honeycomb, and heat treating.

KIMSEONGJUN, KANG M J, SHIN H K, LEE N S, JAE P Y, SUNG M J

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Method for generating white light using white light-emitting quantum dots, involves mixing naphthalene and heteroatom co-doping compound, fabricating heteroatom co-doped graphene quantum dots from obtained mixture, and generating white light using obtained white-light emitting quantum dots.

SAGAR V K, BISHT P B

Preparing highly stable and efficient excitation dependent luminescent graphene quantum dots from Bougainvillea glabra flower involves washing Bougainvillea Glabra flower with bract and cutting into small pieces, and mixing pieces of bougainvillea Glabra flower with bract along with distilled water.

PANACHIKKOOL M, PANDIYARAJAN T

Heat dissipation sheet useful for display component comprises heat dissipation layer formed of polymer sheet containing graphene particles, and first adhesive layer located on top of heat dissipation layer.

YOO T H, LEE J, JOH B J, PARK M W, PARK M, CHO B, LIU T

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Photo-induced pure spin flow Sawtooth graphene device has triangulation provided with left electrode, right electrode and middle area, where middle area is provided with head-to-head triangle alkene, and photoelectric nano device is to take middle area as axis.

HUANG X, DONG Y

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M